IRFR010 TO-252 50V 8.2A MOSFET
IRFR010
Type Designator: IRFR010
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 8.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 6.7 nC
Rise Time (tr): 33 nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO252
Ürün Bilgisi
IRFR010
Type Designator: IRFR010
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 8.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 6.7 nC
Rise Time (tr): 33 nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO252