IRFR5305PBF TO-252 31A 60V 110W 0.65OHM P-CHANNEL MOSFET
IRFR5305PBF MOSFET
Type Designator: IRFR5305PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 31 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 63 nC
Rise Time (tr): 66 nS
Drain-Source Capacitance (Cd): 520 pF
Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm
Package: TO-252
Ürün Bilgisi
IRFR5305PBF MOSFET
Type Designator: IRFR5305PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 31 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 63 nC
Rise Time (tr): 66 nS
Drain-Source Capacitance (Cd): 520 pF
Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm
Package: TO-252