IRFR5505TRPBF TO-252 55V 18A 57W 0.11OHM P-CHANNEL MOSFET
IRFR5505
Type Designator: IRFR5505
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 57 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32(max) nC
Rise Time (tr): 28 nS
Drain-Source Capacitance (Cd): 270 pF
Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm
Package: TO252
Ürün Bilgisi
IRFR5505
Type Designator: IRFR5505
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 57 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32(max) nC
Rise Time (tr): 28 nS
Drain-Source Capacitance (Cd): 270 pF
Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm
Package: TO252