IRFR9014 TO-252 60V 5.1A MOSFET
IRFR9014
Type Designator: IRFR9014
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12(max) nC
Rise Time (tr): 63 nS
Drain-Source Capacitance (Cd): 170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
Package: TO252
Ürün Bilgisi
IRFR9014
Type Designator: IRFR9014
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12(max) nC
Rise Time (tr): 63 nS
Drain-Source Capacitance (Cd): 170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
Package: TO252