IRFR9020 TO-252 50V 9.9A MOSFET
IRFR9020
Type Designator: IRFR9020
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 42 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 9.4 nC
Rise Time (tr): 57 nS
Drain-Source Capacitance (Cd): 320 pF
Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm
Package: TO252
Ürün Bilgisi
IRFR9020
Type Designator: IRFR9020
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 42 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 9.4 nC
Rise Time (tr): 57 nS
Drain-Source Capacitance (Cd): 320 pF
Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm
Package: TO252