IRFR9110TRL TO-252 3.1A 100V 25W 1.2Ω P-CHANNEL MOSFET
IRFR9110PBF MOSFET
Type Designator: IRFR9110PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.7 nC
Rise Time (tr): 27 nS
Drain-Source Capacitance (Cd): 94 pF
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: TO-252
Ürün Bilgisi
IRFR9110PBF MOSFET
Type Designator: IRFR9110PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.7 nC
Rise Time (tr): 27 nS
Drain-Source Capacitance (Cd): 94 pF
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: TO-252