IRFR9120NPBF TO-252 5.6A 100V P-CHANNEL MOSFET
IRFR9120
Type Designator: IRFR9120
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 42 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 18(max) nC
Rise Time (tr): 29 nS
Drain-Source Capacitance (Cd): 170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO252
Ürün Bilgisi
IRFR9120
Type Designator: IRFR9120
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 42 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 18(max) nC
Rise Time (tr): 29 nS
Drain-Source Capacitance (Cd): 170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO252