IRFS630B TO-220F 200V 9A N-CHANNEL MOSFET
IRFS630B
Type Designator: IRFS630B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 38 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 22 nC
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: TO220F
Ürün Bilgisi
IRFS630B
Type Designator: IRFS630B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 38 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 22 nC
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: TO220F