IRFS820 TO-220F PLASTİK 500V 2A MOSFET
IRFS820
Type Designator: IRFS820
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 52 pF
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO220F
Ürün Bilgisi
IRFS820
Type Designator: IRFS820
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 52 pF
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO220F