IRFS830A TO-220F PLASTİK 500V 3.1A MOSFET
IRFS830A
Type Designator: IRFS830A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 38 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 33 nC
Rise Time (tr): 16 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO220F
Ürün Bilgisi
IRFS830A
Type Designator: IRFS830A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 38 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 33 nC
Rise Time (tr): 16 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO220F