IRL2910PBF TO-220 100V 55A N-CHANNEL MOSFET TRANSISTOR
IRL2910PBF
Type Designator: IRL2910PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 55 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 140 nC
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 630 pF
Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
Package: TO220AB
Ürün Bilgisi
IRL2910PBF
Type Designator: IRL2910PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 55 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 140 nC
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 630 pF
Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
Package: TO220AB