IRLR8103V TO-252 91A 30V 0.009OHM 89W 27nC N-CHANNEL MOSFET
IRLR8103V
Type Designator: IRLR8103V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 89 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 89 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 27 nC
Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
Package: DPAK
Ürün Bilgisi
IRLR8103V
Type Designator: IRLR8103V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 89 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 89 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 27 nC
Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
Package: DPAK