IXFH12N100Q TO-247 12A 1000V 300W 1.05Ω N-CHANNEL MOSFET
IXFH12N100Q MOSFET
Type Designator: IXFH12N100Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 90 nC
Rise Time (tr): 23 nS
Drain-Source Capacitance (Cd): 315 pF
Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
Package: TO247
Ürün Bilgisi
IXFH12N100Q MOSFET
Type Designator: IXFH12N100Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 90 nC
Rise Time (tr): 23 nS
Drain-Source Capacitance (Cd): 315 pF
Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
Package: TO247