IXFH170N10 TO-247 170A 100V 715W 9mΩ N-CHANNEL MOSFET
IXFH170N10P MOSFET
Type Designator: IXFH170N10P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 715 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 170 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 198 nC
Rise Time (tr): 150 nS
Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
Package: TO247
Ürün Bilgisi
IXFH170N10P MOSFET
Type Designator: IXFH170N10P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 715 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 170 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 198 nC
Rise Time (tr): 150 nS
Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
Package: TO247