IXFH26N50Q TO-247 26A 500V 300W 0.20Ω N-CHANNEL MOSFET
IXFH26N50Q MOSFET
Type Designator: IXFH26N50Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 26 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 95 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 500 pF
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO247
Ürün Bilgisi
IXFH26N50Q MOSFET
Type Designator: IXFH26N50Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 26 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 95 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 500 pF
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO247