IXFH26N60Q TO-247 26A 600V 360W 0.25Ω N-CHANNEL MOSFET
IXFH26N60Q MOSFET
Type Designator: IXFH26N60Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 360 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 26 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 150 nC
Rise Time (tr): 32 nS
Drain-Source Capacitance (Cd): 560 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: TO247
Ürün Bilgisi
IXFH26N60Q MOSFET
Type Designator: IXFH26N60Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 360 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 26 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 150 nC
Rise Time (tr): 32 nS
Drain-Source Capacitance (Cd): 560 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: TO247