IXFH40N85X TO-247 40A 850V 860W 0.145Ω N-CHANNEL MOSFET
IXFH40N85X MOSFET
Type Designator: IXFH40N85X
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 860 W
Maximum Drain-Source Voltage |Vds|: 850 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 98 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 3690 pF
Maximum Drain-Source On-State Resistance (Rds): 0.145 Ohm
Package: TO247
Ürün Bilgisi
IXFH40N85X MOSFET
Type Designator: IXFH40N85X
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 860 W
Maximum Drain-Source Voltage |Vds|: 850 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 98 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 3690 pF
Maximum Drain-Source On-State Resistance (Rds): 0.145 Ohm
Package: TO247