IXFH6N120P TO-247 6A 1200V 250W 2.75Ω N-CHANNEL MOSFET
IXFH6N120P MOSFET
Type Designator: IXFH6N120P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 1200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 92 nC
Rise Time (tr): 300 nS
Maximum Drain-Source On-State Resistance (Rds): 2.75 Ohm
Package: TO247
Ürün Bilgisi
IXFH6N120P MOSFET
Type Designator: IXFH6N120P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 1200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 92 nC
Rise Time (tr): 300 nS
Maximum Drain-Source On-State Resistance (Rds): 2.75 Ohm
Package: TO247