IXFH80N10Q TO-247 80A 100V 360W 15mΩ N-CHANNEL MOSFET
IXFH80N10Q MOSFET
Type Designator: IXFH80N10Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 360 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 180 nC
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 1600 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO247
Ürün Bilgisi
IXFH80N10Q MOSFET
Type Designator: IXFH80N10Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 360 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 180 nC
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 1600 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO247