IXFX34N80 TO-247 34A 800V 0.24Ω N-CHANNEL MOSFET
IXFX34N80 MOSFET
Type Designator: IXFX34N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 560 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 34 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 270 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 920 pF
Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm
Package: TO247
Ürün Bilgisi
IXFX34N80 MOSFET
Type Designator: IXFX34N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 560 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 34 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 270 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 920 pF
Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm
Package: TO247