IXGH16N170 TO-247 32A 1700V 190W IGBT TRANSISTOR
IXGH16N170 IGBT
Type Designator: IXGH16N170
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 190
Maximum Collector-Emitter Voltage |Vce|, V: 1700
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 32
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 48
Collector Capacity (Cc), typ, pF: 75
Total Gate Charge (Qg), typ, nC: 78
Package: TO247
Ürün Bilgisi
IXGH16N170 IGBT
Type Designator: IXGH16N170
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 190
Maximum Collector-Emitter Voltage |Vce|, V: 1700
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 32
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 48
Collector Capacity (Cc), typ, pF: 75
Total Gate Charge (Qg), typ, nC: 78
Package: TO247