IXTH21N50 TO-247 21A 500V 300W 250mΩ N-CHANNEL MOSFET
IXTH21N50 MOSFET
Type Designator: IXTH21N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 160 nC
Rise Time (tr): 33 nS
Drain-Source Capacitance (Cd): 450 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: TO247
Ürün Bilgisi
IXTH21N50 MOSFET
Type Designator: IXTH21N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 160 nC
Rise Time (tr): 33 nS
Drain-Source Capacitance (Cd): 450 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: TO247