IXTP200N055T2 TO-220 200A 55V 360W 4.2mΩ N-CHANNEL MOSFET
IXTP200N055T2 MOSFET
Type Designator: IXTP200N055T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 360 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 200 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 109 nC
Rise Time (tr): 49 nS
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: TO220
Ürün Bilgisi
IXTP200N055T2 MOSFET
Type Designator: IXTP200N055T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 360 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 200 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 109 nC
Rise Time (tr): 49 nS
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: TO220