IXTP4N80P TO-220 3.6A 800V 100W 3.4Ω N-CHANNEL MOSFET
IXTP4N80P MOSFET
Type Designator: IXTP4N80P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 3.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 600 nS
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO220
Ürün Bilgisi
IXTP4N80P MOSFET
Type Designator: IXTP4N80P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 3.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 600 nS
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO220