IXTP50N20P TO-220 50A 200V 360W 60mΩ N-CHANNEL MOSFET
IXTP50N20P MOSFET
Type Designator: IXTP50N20P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 360 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 150 nS
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: TO220
Ürün Bilgisi
IXTP50N20P MOSFET
Type Designator: IXTP50N20P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 360 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 150 nS
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: TO220