IXTQ130N10T TO-3P 130A 100V 360W 9.1mΩ N-CHANNEL MOSFET
IXTQ130N10T MOSFET
Type Designator: IXTQ130N10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 360 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 104 nC
Rise Time (tr): 67 nS
Maximum Drain-Source On-State Resistance (Rds): 0.0091 Ohm
Package: TO3P
Ürün Bilgisi
IXTQ130N10T MOSFET
Type Designator: IXTQ130N10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 360 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 104 nC
Rise Time (tr): 67 nS
Maximum Drain-Source On-State Resistance (Rds): 0.0091 Ohm
Package: TO3P