IXTQ22N50P TO-3P 22A 500V 350W 270mΩ N-CHANNEL MOSFET
IXTQ22N50P MOSFET
Type Designator: IXTQ22N50P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 350 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 22 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 50 nC
Rise Time (tr): 400 nS
Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm
Package: TO3P
Ürün Bilgisi
IXTQ22N50P MOSFET
Type Designator: IXTQ22N50P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 350 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 22 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 50 nC
Rise Time (tr): 400 nS
Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm
Package: TO3P