IXTQ36N50P TO-3P 36A 500V 540W 170mΩ N-CHANNEL MOSFET
IXTQ36N50P MOSFET
Type Designator: IXTQ36N50P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 540 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 36 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 82 nC
Rise Time (tr): 400 nS
Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm
Package: TO3P
Ürün Bilgisi
IXTQ36N50P MOSFET
Type Designator: IXTQ36N50P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 540 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 36 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 82 nC
Rise Time (tr): 400 nS
Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm
Package: TO3P