IXTQ52N30P TO-3P 52A 300V 400W N-CHANNEL POWER MOSFET TRANSISTOR
IXTQ52N30P
Type Designator: IXTQ52N30P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 400 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 52 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 110 nC
Rise Time (tr): 250 nS
Maximum Drain-Source On-State Resistance (Rds): 0.066 Ohm
Package: TO3P
Ürün Bilgisi
IXTQ52N30P
Type Designator: IXTQ52N30P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 400 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 52 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 110 nC
Rise Time (tr): 250 nS
Maximum Drain-Source On-State Resistance (Rds): 0.066 Ohm
Package: TO3P