IXTQ69N30P TO-3P 69A 300V 500W 0.049OHM N-CHANNEL MOSFET
Type Designator: IXTQ69N30P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 69 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 156 nC
trⓘ - Rise Time: 330 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
Package: TO3P
Ürün Bilgisi
Type Designator: IXTQ69N30P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 69 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 156 nC
trⓘ - Rise Time: 330 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
Package: TO3P