IXTQ82N25P TO-3P 82A 250V 500W 0.035Ω N-CHANNEL MOSFET
IXTQ82N25P MOSFET
Type Designator: IXTQ82N25P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 500 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 82 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 142 nC
Rise Time (tr): 200 nS
Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm
Package: TO3P
Ürün Bilgisi
IXTQ82N25P MOSFET
Type Designator: IXTQ82N25P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 500 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 82 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 142 nC
Rise Time (tr): 200 nS
Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm
Package: TO3P