KGT50N60KDA IGBT

Type Designator: KGT50N60KDA

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 345

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 100

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 85

Maximum Collector Capacity (Cc), pF: 250pF

Package: TO247