MDD1903RH TO-252 12.8A 100V 36.8W 0.105Ω N-CHANNEL MOSFET
MDD1903RH MOSFET
Type Designator: MDD1903RH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 36.8 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 12.8 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10.6 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm
Package: TO-252
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MDD1903RH MOSFET
Type Designator: MDD1903RH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 36.8 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 12.8 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10.6 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm
Package: TO-252