MDHT4N20YURH SOT-223 0.85A 200V 2.1W 1.35Ω N-CHANNEL MOSFET
MDHT4N20YURH MOSFET
Type Designator: MDHT4N20YURH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.1 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 0.85 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 38 nS
Drain-Source Capacitance (Cd): 42.7 pF
Maximum Drain-Source On-State Resistance (Rds): 1.35 Ohm
Package: SOT-223
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MDHT4N20YURH MOSFET
Type Designator: MDHT4N20YURH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.1 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 0.85 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 38 nS
Drain-Source Capacitance (Cd): 42.7 pF
Maximum Drain-Source On-State Resistance (Rds): 1.35 Ohm
Package: SOT-223