MJF18006

Type Designator: MJF18006

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 14 MHz

Collector Capacitance (Cc): 120 pF

Forward Current Transfer Ratio (hFE), MIN: 14

Noise Figure, dB: -

Package: ISO220