MTP8N50E TO-220 8A 500V 0.8Ω 125W N-CHANNEL MOSFET
MTP8N50E MOSFET
Type Designator: MTP8N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 40 nC
Rise Time (tr): 33 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO-220AB
Ürün Bilgisi
MTP8N50E MOSFET
Type Designator: MTP8N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 40 nC
Rise Time (tr): 33 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO-220AB