MTW7N80E MOSFET

Type Designator: MTW7N80E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 70 nC

Rise Time (tr): 37 nS

Drain-Source Capacitance (Cd): 244 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO-247AE