MTW7N80E - (W7N80) TO-247 7A 800V 180W 1Ω N-CHANNEL MOSFET
MTW7N80E MOSFET
Type Designator: MTW7N80E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 180 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 37 nS
Drain-Source Capacitance (Cd): 244 pF
Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
Package: TO-247AE
Ürün Bilgisi
MTW7N80E MOSFET
Type Designator: MTW7N80E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 180 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 37 nS
Drain-Source Capacitance (Cd): 244 pF
Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
Package: TO-247AE