NCE0110K MOSFET

Type Designator: NCE0110K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 9.6 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 15.5 nC

Rise Time (tr): 7.4 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: TO252