NCE40H12K TO-252 120A 40V 120W 0.004OHM N-CHANNEL MOSFET
NCE40H12K MOSFET
Type Designator: NCE40H12K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 970 pF
Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
Package: TO252
Ürün Bilgisi
NCE40H12K MOSFET
Type Designator: NCE40H12K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 970 pF
Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
Package: TO252