NCE603S SOIC-8 4.3A-60V 0,028OHM 2W NP-Channel Mosfet
₺79,47 + KDV
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NCE603S SOIC-8 4.3A-60V 0,028OHM 2W NP-Channel Mosfet
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V
Qg ⓘ - Total Gate Charge: 13 nC
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO8
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NCE603S SOIC-8 4.3A-60V 0,028OHM 2W NP-Channel Mosfet
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V
Qg ⓘ - Total Gate Charge: 13 nC
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO8
NCE603S SOIC-8 4.3A-60V 0,028OHM 2W NP-Channel Mosfet
₺79 + KDV