NCE80H12 TO-220 120A 80V 6mΩ N-CHANNEL MOSFET
NCE80H12 MOSFET
Type Designator: NCE80H12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 220 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 163 nC
Rise Time (tr): 24 nS
Drain-Source Capacitance (Cd): 520 pF
Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm
Package: TO220
Ürün Bilgisi
NCE80H12 MOSFET
Type Designator: NCE80H12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 220 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 163 nC
Rise Time (tr): 24 nS
Drain-Source Capacitance (Cd): 520 pF
Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm
Package: TO220