NCEP85T16 MOSFET

Type Designator: NCEP85T16

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 220 W

Maximum Drain-Source Voltage |Vds|: 85 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 160 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 105 nC

Rise Time (tr): 29 nS

Drain-Source Capacitance (Cd): 1520 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm

Package: TO220