NTD12N10T4G - (T12N10G) TO-252 12A 100V N-CHANNEL MOSFET TRANSISTOR
NTD12N10T4
Type Designator: NTD12N10T4
Marking Code: T12N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 56.6 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 14 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 115 pF
Maximum Drain-Source On-State Resistance (Rds): 0.165 Ohm
Package: DPAK
Ürün Bilgisi
NTD12N10T4
Type Designator: NTD12N10T4
Marking Code: T12N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 56.6 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 14 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 115 pF
Maximum Drain-Source On-State Resistance (Rds): 0.165 Ohm
Package: DPAK