NTD20N06LT4G - (20N6LG) TO-252 20A 60V 60W N-CHANNEL MOSFET
NTD20N06LT4G MOSFET
Type Designator: NTD20N06LT4G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 11 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 0.031(typ) Ohm
Package: TO252