QM3016D TO-252 96A 30V 62.5W 4mΩ N-CHANNEL MOSFET
QM3016D MOSFET
Type Designator: QM3016D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 96 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 31.6 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 400 pF
Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
Package: TO-252
Ürün Bilgisi
QM3016D MOSFET
Type Designator: QM3016D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 96 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 31.6 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 400 pF
Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
Package: TO-252