RU190N08Q TO-247 190A 80V N-CHANNEL MOSFET
RU190N08Q
Type Designator: RU190N08Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 400 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 190 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 155 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 1100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0048 Ohm
Package: TO247
Ürün Bilgisi
RU190N08Q
Type Designator: RU190N08Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 400 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 190 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 155 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 1100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0048 Ohm
Package: TO247