SIHP30N60E TO-220 29A 600V 250W N-CHANNEL MOSFET
SIHP30N60E MOSFET
Type Designator: SIHP30N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 29 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 85 nC
Rise Time (tr): 32 nS
Drain-Source Capacitance (Cd): 138 pF
Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
Package: TO-220AB
Ürün Bilgisi
SIHP30N60E MOSFET
Type Designator: SIHP30N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 29 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 85 nC
Rise Time (tr): 32 nS
Drain-Source Capacitance (Cd): 138 pF
Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
Package: TO-220AB