SI2302CDS-T1-GE3 - (M2RVG) SOT-23 2.9A 20V N-CHANNEL MOSFET
SI2302CDS-T1-GE3 MOSFET
Type Designator: SI2302CDS-T1-GE3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12 nC
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 0.028(typ) Ohm
Package: SOT23
Ürün Bilgisi
SI2302CDS-T1-GE3 MOSFET
Type Designator: SI2302CDS-T1-GE3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12 nC
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 0.028(typ) Ohm
Package: SOT23