SI2369DS-T1-GE3DKR-ND SOT-23 30V 7.6A 1.25W P-CHANNEL 29MOHM MOSFET
₺22,24 + KDV
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SI2369DS-T1-GE3DKR-ND SOT-23 30V 7.6A 1.25W P-CHANNEL 29MOHM MOSFET
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 29mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1295 pF @ 15 V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 29mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1295 pF @ 15 V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
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SI2369DS-T1-GE3DKR-ND SOT-23 30V 7.6A 1.25W P-CHANNEL 29MOHM MOSFET
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 29mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1295 pF @ 15 V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 29mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1295 pF @ 15 V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
SI2369DS-T1-GE3DKR-ND SOT-23 30V 7.6A 1.25W P-CHANNEL 29MOHM MOSFET
₺22 + KDV