SI4090DY-T1-GE3 - (4090) SOIC-8 19.7A 100V 3.5W 10mΩ N-CHANNEL MOSFET
SI4090DY MOSFET
Type Designator: SI4090DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3.5 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.3 V
Maximum Drain Current |Id|: 13.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 790 pF
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: SO-8
Ürün Bilgisi
SI4090DY MOSFET
Type Designator: SI4090DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3.5 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.3 V
Maximum Drain Current |Id|: 13.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 790 pF
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: SO-8